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| EIA7785-2 UPDATED 11/16/2006 7.70-8.50GHz 2-Watt Internally Matched Power FET FEATURES * * * * * * * 7.70- 8.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +34 dBm Output Power at 1dB Compression 12.5 dB Power Gain at 1dB Compression 33% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .060 MIN. .650.008 .512 EIA7785-2 GATE Excelics YYWW .060 MIN. DRAIN .319 .022 SN .094 .382 .004 .129 .070 .008 .045 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f = 7.70-8.50GHz VDS = 8V, IDSQ 800mA Gain at 1dB Compression f = 7.70-8.50GHz VDS = 8V, IDSQ 800mA Gain Flatness f = 7.70-8.50GHz VDS = 8V, IDSQ 800mA Power Added Efficiency at 1dB Compression VDS = 8V, IDSQ 800mA f = 7.70-8.50GHz Drain Current at 1dB Compression f = 7.70-8.50GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 2 1 Caution! ESD sensitive device. MIN 33.0 11.5 TYP 34.0 12.5 0.6 33 900 1400 -1.0 10 1100 1800 -2.5 11 o MAX UNITS dBm dB dB % mA mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 14 mA Note: 1. Tested with 100 Ohm gate resistor. 2. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 VDS VGS Igsf Igsr Pin Tch Tstg Pt Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation 12 -5 21.6mA -3.6mA 33dBm 175 oC -65 to +175 oC 13W 8V -3V 7.2mA -1.2mA @ 3dB Compression 175 oC -65 to +175 oC 13W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2006 EIA7785-2 UPDATED 11/16/2006 7.70-8.50GHz 2-Watt Internally Matched Power FET DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 2 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2006 |
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